savantic semiconductor product specification silicon npn power transistors 2SC3691 d escription with to-220fa package large current ,high speed low saturation voltage applications designed for high speed and power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 10 a i b base current 2.5 a t a =25 2 p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3691 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =3a; i b =0.3a,l=1mh 60 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.15 a 0.3 v v cesat-2 collector-emitter saturation voltage i c =4a; i b =0.2a 0.5 v v besat-1 base-emitter saturation voltage i c =3a; i b =0.15 a 1.2 v v besat-2 base-emitter saturation voltage i c =4a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =60v; i e =0 10 a i cex collector cut-off current v ce =60v; v be =-1.5v ta=125 10 1.0 a ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.5a ; v ce =2v 100 h fe-2 dc current gain i c =1a ; v ce =2v 100 200 400 h fe-3 dc current gain i c =3a ; v ce =2v 60 c ob output capacitance i e =0; v cb =10v;f=1mhz 70 pf f t transition frequency i c =0.5a ; v ce =10v 150 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =3a;r l =17 b i b1 =-i b2 =0.15a v cc c 50v 0.3 s h fe-2 classifications m l k 100-200 150-300 200-400
savantic semiconductor product specification 3 silicon npn power transistors 2SC3691 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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